IGBT Inventor Awarded $1M Prize

The prestigious 2024 Millennium Technology Prize has been awarded to Professor Bantval Jayant Baliga of North Carolina State University for his groundbreaking invention of the Insulated Gate Bipolar Transistor (IBGT). This technology, developed in the 1980s, has played a crucial role in high voltage renewable energy applications such as wind and solar power, as well as in electric vehicles and electric motors for consumer and industrial use.

Overseen by the Technology Academy Finland, the €1 million global award recognizes Professor Baliga's significant contribution to the field of technology. Expressing his excitement and gratitude, Professor Baliga stated, "It is very exciting to have been selected for this great honour. I am particularly happy that the Millennium Technology Prize will bring attention to my innovation, as the IGBT is an embedded technology that is hidden from the eyes of society."

Professor Baliga, who recently received the title of Progress Energy Distinguished University Emeritus Professor, emphasized the wide-reaching impact of the IGBT on society. He highlighted how the technology has led to the development of products that enhance comfort, convenience, and health for billions of people worldwide, while also contributing to the reduction of carbon dioxide emissions to combat global warming.

Currently, Professor Baliga and his team are working on two new inventions aimed at further enhancing efficiencies in solar power generation, electric vehicles, and power delivery for AI servers. The first invention, known as the Baliga Short-circuit Improvement Concept (BaSIC), addresses the challenge of poor short-circuit withstand time for Silicon Carbide power MOSFETs used in motor drives. The second invention, a Bi-Directional Field-Effect Transistor (BiDFET), is set to revolutionize power delivery and management in power electronic applications.

Professor Minna Palmroth, Chair of the Board of Technology Academy Finland, praised the IGBT for its significant role in promoting sustainability and improving living standards globally. She emphasized the importance of electrification and renewable energy in addressing environmental challenges, with the IGBT serving as a key technology in this transition.

Professor Päivi Törmä, Chair of the International Selection Committee of the Millennium Technology Prize, highlighted the critical impact of Professor Baliga's innovation on energy consumption and the development of modern societies. Power electronics, she noted, is essential for the automation of processes and energy systems, with the IGBT standing out as the most important power semiconductor device for the past four decades.