Advanced Power Electronics: APEC Introduces 1,200V SiC MOSFETs in SOT-227 Packaging

SemiQ, a leading semiconductor company, will be showcasing its latest innovation, the 1.2kV SOT-227 silicon carbide mosfet power modules, at the upcoming Applied Power Electronics Conference (APEC) at the end of February. This highly anticipated event will bring together industry experts and enthusiasts to explore the latest advancements in power electronics.

The SOT-227 package, designed to be bolted to a heatsink, offers a range of options to suit various applications. The modules are available with or without a co-packaged Schottky diode, providing flexibility for different circuit designs. Current ratings for these modules range from 30 to 113A, while the on-resistance spans from 80mΩ to 20mΩ, offering efficient power management solutions.

With a footprint of 38 x 25mm and a height of 12mm (excluding M4 screw heads and attached conductors), the SOT-227 package is compact yet powerful. Its screw terminals ensure secure electrical connections, making it suitable for demanding industrial applications.

"All of the modules undergo rigorous testing, including wafer-level gate burn-in, to ensure high-quality gate oxide with a stable gate threshold voltage," stated a representative from SemiQ. "In addition to the burn-in test, we perform various other tests such as gate stress, high-temperature reverse bias drain stress, and H3TRB (high humidity, voltage, and temperature) to ensure industrial-grade quality levels."

One of the standout modules from SemiQ is the 1.2kV 18mΩ 113A GCMS020B120S1-E1 mosfet, which comes with a co-packaged Schottky diode. This module can handle continuous currents of up to 106A, with the mosfet capable of being pulsed up to 250A. It can handle power levels of up to 395W at 25°C, and its junction is specified across a wide temperature range of -55 to +175°C.

The recommended gate drive for the GCMS020B120S1-E1 module is -5 to +20V, with maximum limits of -10V and +25V. Its input capacitance is measured at 5.3nF, ensuring efficient power transfer and management.

These power modules find applications in various industries, including electric vehicle chargers (including on-board chargers), solar and wind energy converters, and data center power supplies. Their versatility and reliability make them an ideal choice for demanding power management applications.

"We're thrilled to showcase our new family of 1,200V mosfet modules at APEC," said Timothy Han, the president of SemiQ. "Our power modules stand out for their rigorous testing, ensuring reliability and stability. All modules have undergone testing exceeding 1,350V. From gate burn-in testing to stress tests like HTRB and H3TRB, we prioritize stability and quality."

APEC will be held in Long Beach, California, from 25th to 29th February. Visitors can find SemiQ at booth 2245, where they can explore the latest advancements in power electronics and learn more about the innovative 1.2kV SOT-227 silicon carbide mosfet power modules.

The datasheet for the GCMS020B120S1-E1 module can be found here.