Infineon Technologies has announced the release of its fourth generation 700V CoolGaN transistor family, marking a significant milestone following the acquisition of GaN Systems last year. The island architecture of the e-mode 700V GaN transistors has been designed to provide a 20% boost in input and output figures-of-merit, resulting in higher efficiency and reduced power losses.
This development, which was first discussed in October last year, showcases the commitment of Infineon to push the boundaries of power electronics technology. The combination of superior electrical characteristics and innovative packaging ensures maximum performance across a wide range of applications, including consumer chargers, notebook adapters, data center power supplies, renewable energy inverters, and battery storage solutions.
The 700V G4 GaN family comprises 13 devices with a voltage rating of 700V and on-resistance ranging from 20 mΩ to 315 mΩ, catering to power designs ranging from 20W to 25kW. The increased granularity in device specification, coupled with a variety of industry-standard package options such as PDFN, TOLL, and TOLT, allows for the selection of on-resistance and packages based on specific application requirements.
By offering a wide range of package options, Infineon enables engineers to optimize both electrical and thermal system performance, resulting in the implementation of the most cost-effective solutions. The devices are characterized by fast turn-on and turn-off speeds, as well as minimal switching losses, making them ideal for power systems that require high efficiency and reliability.
Moreover, the use of e-mode with a transient voltage of 850V enhances the overall system's reliability by providing greater robustness against anomalies in the user environment, such as voltage peaks. The CoolGaN Transistor 700V G4 products are currently available in TOLL, PDFN 5x6, and 8x8 packages, with more variety in RDS(on) and the TOLT package set to be introduced later this year.