7nm FDSOI: Ready for Launch

Nick Flaherty recently had the opportunity to sit down with Leti CEO Sébastien Dauvé and CTO Jean-René Lèquepeys during the Innovation Days to discuss the latest developments in the semiconductor industry. The focus was on the FAMES pilot line, 6G, quantum computing, and neuromorphic computing.

This week marked the announcement of an €830m pilot line in France dedicated to advancing 10nm and 7nm FDSOI technology for the next generation of 5G and 6G chip and system designs. Dauvé highlighted the challenges faced by the industry, emphasizing the need for rapid innovation and sustainable system development.

The FAMES semiconductor pilot line in Grenoble, France, may seem diverse in its areas of focus, ranging from materials to packaging. However, the primary goal of this substantial investment is to pave the way for the creation of stacked 3D RF system devices tailored for 5G and 6G technologies.

CEA-Leti's FAMES pilot line project is set to develop cutting-edge fully depleted silicon on insulator (FD SOI) process technology at 10nm and 7nm scales, catering to major foundries and chip manufacturers. CTO Lèquepeys underlined the importance of new filters for 6G applications, with frequencies ranging from 7 to 15GHz.

Leti's expansion includes additional clean rooms and equipment, such as an EUV lithography system, to support the FAMES pilot line. The project aims to explore non-volatile memories and heterogeneous integration for creating disruptive chip architectures, ensuring optimal performance and power efficiency.