Cutting-Edge SiC MOSFET Powers Compact 800V EV Drives

StarPower Europe has introduced a new line of half-bridge modules utilizing SiC MOSFET technology specifically designed for the drivetrain systems of electric vehicles (EVs). These modules offer advanced features that enhance the performance and efficiency of EV drive controllers.

The SiC MOSFET modules developed by StarPower are characterized by their low on-resistance and a high reverse voltage rating of 1200 V. This combination of features allows for improved power handling capabilities and overall system efficiency.

By incorporating 1200V SiC MOSFET devices into the half-bridge modules, engineers can create compact and highly efficient drive controllers with increased power density, especially in 800V designs. This advancement in technology opens up new possibilities for the design and performance of EV drivetrains.

The range of SiC MOSFET modules includes models such as MD19HFC120N6HT, MD22HFC120N6HY, and MD29HFC120N6HT, with on-resistance values ranging from 1.8 mΩ to 2.82 mΩ depending on the specific model. These modules are designed for easy parallel connection to boost current handling capacity without the need for complex integration procedures.

One of the key design features of these MOSFET modules is the 2-in-1 housing configuration, which is optimized to minimize parasitic inductance and prevent unwanted oscillations. The modules are equipped with a solid copper base plate featuring PINFIN structures for efficient heat dissipation, ensuring optimal thermal management during operation. Additionally, the modules utilize a high-strength ceramic material, silicon nitride (Si3N4), as the carrier substrate, which is bonded using the AMB (Active Metal Brazing) process for enhanced durability.