Finwave Unveils RF GaN-on-Si Foundry

Founded in 2012, Finwave is revolutionizing the field of RF technology by basing its devices on performance enhancements derived from a fin structure researched at the prestigious Massachusetts Institute of Technology.

The latest collaboration between Finwave and GlobalFoundries is set to propel the company's innovative enhancement-mode (E-mode) MISHEMT technology into volume production at the 200mm wafer fab in Burlington, Vermont. This strategic partnership will leverage GlobalFoundries' advanced 90RFGaN manufacturing process as the foundation for the technique.

The GaN-on-Si E-mode MISHEMT technology developed by Finwave boasts exceptional gain and efficiency at voltages below 5V, while maintaining high uniformity across 200mm wafers. According to Finwave, this breakthrough technology will pave the way for the creation of efficient power amplifiers tailored for applications where traditional GaAs and Si technologies have limitations.

These applications include but are not limited to 5G FR2/FR3 bands, 6G and mmWave amplifiers, and high-power Wi-Fi 7 systems. The demand for superior range and efficiency in these sectors makes the development of this technology crucial for the advancement of RF technology.

"This partnership marks a significant milestone in our journey towards innovation and the seamless integration of RF front-ends onto a single GaN-on-Si device," stated Pierre-Yves Lesaicherre, the CEO of Finwave, emphasizing the potential impact of this collaboration on the industry.