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Cutting-Edge 16Gbit DDR5 DRAM Produced with 1c-nm Process

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August 30, 2024

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The latest advancement in memory technology has arrived with SK Hynix's announcement of the 1c memory process, bringing the industry closer to the coveted 10nm threshold. This breakthrough marks a significant milestone in the field of memory innovation, promising enhanced performance and efficiency for a wide range of applications.

SK Hynix has revealed its ambitious timeline for the mass production of the 1c DDR5 memory, with plans to commence volume shipments by 2025. The company's proactive approach underscores its commitment to staying at the forefront of technological progress and meeting the growing demands of the market.

DRAM revenues experienced a notable surge in the second quarter of 2024, signaling a strong market response to the cutting-edge capabilities of the 1c DDR5 technology. The industry's positive reception bodes well for the widespread adoption of this next-generation memory solution.

The cost competitiveness of the 1c DDR5 has been significantly enhanced through the utilization of a novel material in select components of the extreme ultraviolet (EUV) lithography process. SK Hynix's strategic decision has not only improved product quality but also boosted wafer productivity by over 30 percent, showcasing the company's dedication to continuous innovation.

With an operating speed of 8Gbps, the 1c DDR5 is poised to revolutionize high-performance data centers, offering an 11 percent improvement over its predecessor. Moreover, the enhanced power efficiency, boasting a more than 9 percent increase, has the potential to reduce electricity costs for data centers by up to 30 percent, making it a compelling choice for businesses seeking to optimize their operations.

"We are dedicated to delivering unparalleled value to our customers by integrating the cutting-edge 1c technology, renowned for its superior performance and cost competitiveness, into our flagship next-generation products such as HBM, LPDDR6, and GDDR7," stated Kim Jonghwan, the head of DRAM development at SK Hynix, emphasizing the company's commitment to driving innovation and meeting customer needs.

For more information on SK Hynix's groundbreaking advancements in memory technology, visit www.skhynix.com.

As part of its continuous innovation efforts, SK Hynix has introduced the GDDR7 graphics DRAM, further expanding its portfolio of cutting-edge memory solutions. This latest addition underscores the company's dedication to pushing the boundaries of memory technology and meeting the evolving needs of the market.

Industry projections indicate that HBM is poised to capture a significant share of the DRAM market, with expectations of reaching 20 percent by 2024. This anticipated growth highlights the increasing demand for high-bandwidth memory solutions and positions SK Hynix as a key player in shaping the future of memory technology.

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