New package cuts GaN junction temperature by 25%

Chinese power chip maker Innoscience Technology has introduced four top-side cooled gallium nitride (GaN) transistors that reduce the junction temperature by 25%.

The 100V to 150V GaN-on-Silicon enhancement mode high electron mobility transistors (HEMT) in the newly released Innoscience En-FCQFN top-side cooling package boost the thermal performance. For example, at 30A, the junction temperature in the top-side cooling package is reduced from 52.2°C for bottom-side cooling package types to 39.6°C, a 25% improvement.

The pinouts of the 100V INN100EQ 016A/1.8mΩ and 025A/2.8mΩ parts, as well as the 150V INN150EQ 032A/3.9mΩ and 070A/7.0mΩ devices are compatible with bottom-side cooling package parts. The transistors also retain the characteristics of all Innoscience parts: low resistance; low gate charge; low switching loss and low reverse recovery charge.

“Due to their excellent electrical properties and ultra-miniaturized packaging, our medium and low voltage GaN parts have found broad acceptance, especially in data centres, photovoltaic and energy storage systems, motor drives and power supplies for communications. The En-FCQFN top-side cooling packaging optimises thermal management, further limits system temperature rise, widening the potential market,” said Denis Marcon, General Manager, Innoscience Europe.

The 100V~150V GaN series are also available in WLCSP, FCQFN, LGA and other packaging types, covering different on-resistances and application areas. Together with these devices, the new top-side cooling package En-FCQFN parts are available in mass-production volumes.