Infineon debuts first P-channel MOSFET for space

Infineon Technologies has introduced its inaugural P-channel power MOSFET specifically qualified for space applications. This new 60 V P-channel MOSFET is a valuable addition to the existing lineup of 60 V and 150 V N-channel devices, all of which are housed in cost-effective plastic packaging. This modern packaging solution is more economical compared to the traditional hermetic packaging typically used in radiation-hardened devices. Moreover, it allows for higher production volumes using standard manufacturing processes.

The radiation-tolerant discretes from Infineon have undergone rigorous testing to meet the standards outlined in the AEC-Q101 specification for space applications. In addition to the standard tests, such as outgas and salt atmosphere assessments, these devices are also evaluated for Single Event Effects (SEE) at 46 MeV∙cm²/mg LET and a Total Ionizing Dose (TID) ranging from 30 to 50 krad (Si). With an operational temperature range of -55 °C to 175 °C (maximum), these components are well-suited for the demanding conditions of space.

These innovative devices form part of Infineon’s expanding product portfolio tailored for the emerging "NewSpace" sector. By offering cost-effective radiation-tolerant MOSFETs, Infineon empowers engineers to accelerate their design processes and utilize smaller, lighter components with radiation-resistant properties suitable for missions lasting between two to five years in Low-Earth-Orbit (LEO) space applications.

Chris Opoczynski, the Senior Vice President and General Manager of the High Reliability (HiRel) Business, Power and Sensor Systems Division at Infineon, emphasized the importance of radiation-tolerant components for the successful deployment of next-generation LEO satellite constellations and other space-ready systems. He highlighted the need for components with quick lead times and scalable production capabilities to facilitate rapid deployment and cost efficiency.

Infineon’s product range includes four distinct N-channel MOSFETs, each optimized for specific applications. Engineers can choose between two voltage variants – 60 V and 150 V N-channel MOSFETs, in addition to the newly introduced 60 V P-channel MOSFET. This diverse selection enables engineers to tailor their choices based on the unique power requirements of their projects.

Furthermore, Infineon is actively engaged in the development of Gate Drivers and Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) as part of the ongoing expansion of their Radiation Tolerant Product series. These efforts underscore Infineon’s commitment to providing cutting-edge solutions for the evolving needs of the space industry.