SiC MOSFET platform drives efficiency, cuts system costs

Wolfspeed has introduced its new Gen 4 SiC technology platform, which introduces holistic efficiency improvements to enable reduced system costs and development time while maximizing application lifetime.

Engineered to simplify switching behaviors and design challenges commonly experienced in high-power designs, the Gen 4 SiC platform charts a long-term roadmap across Wolfspeed’s product categories, including power modules, discrete components, and bare die products. These products are currently available in the 750 V, 1200 V and 2300 V classes.

“We understand that each application’s design comes with a unique set of requirements,” said Jay Cameron, senior vice president of Wolfspeed power products. “From its inception, our goal for Gen 4 has been to improve overall system efficiency in real-world operating environments, with a focus on delivering maximum performance at the system level. Gen 4 enables design engineers to create more efficient, longer-lasting systems that perform well in tough operating environments at a better overall system cost.”

Silicon carbide technology is one of the fastest growing components of both the power device market and the greater semiconductor industry. A superior alternative to silicon, silicon carbide is ideal for high power applications — such as EV powertrains, e-mobility, renewable energy systems, battery energy storage systems, and AI data centers — that unlocks improved performance and lower system costs.

Wolfspeed is the only silicon carbide producer with both silicon carbide material and silicon carbide device fabrication facilities based in the United States, a factor that is becoming increasingly important under the increased focus on national security and investment in U.S. semiconductor production.

“Wolfspeed has been relentless in our drive to continue to innovate and bring our silicon carbide to more and more industries with increasingly challenging use cases,” said Wolfspeed Executive Chairman, Tom Werner. “Our Gen 4 platform will be delivered via our highly efficient 200 mm wafers, which will enable us to deliver products on a scale and level of yield not seen in this industry before.”

The Gen 4 SiC platform was designed to comprehensively improve system efficiency and prolong application life, even in harshest of environments, while helping to reduce system cost and development time. Key benefits include:

• Holistic system efficiency — delivering up to a 21% reduction in on-resistance at operating temperatures with up to 15% lower switching losses.
• Durability — ensuring reliable performance, including a short-circuit withstand time of up to 2.3 µS to provide additional safety margin.
• Lower system cost — streamlining design processes to reduce system costs and development time.

Gen 4 SiC products are available in 750-V, 1200-V and 2300-V nodes, with options for power modules, discrete components, and bare die products. New product introductions, including additional footprints and RDSON ranges, will be available throughout 2025 and early 2026.