High-Power SiC Half-Bridges in Compact 62mm Modules Switching 250kW

Infineon, a leading semiconductor manufacturer, is introducing new 1,200V and 2,000V SiC mosfet half bridges packaged in a compact 62mm module. This packaging allows for the utilization of SiC technology in mid-power applications starting from 250kW, where traditional silicon-based IGBT technology reaches its limits in terms of power density.

The company highlights that the internal package design is symmetrical, ensuring identical switching conditions for both the upper and lower switches. This design feature enhances the overall performance and reliability of the module.

Infineon has also taken into consideration the ease of replacement. The main power terminals are equipped with screw connections, facilitating quick and efficient replacement. Additionally, the baseplate of the module has holes for screw mounting, further simplifying the installation process.

The control terminals of the module are push-fit, allowing for easy and secure connections. Furthermore, certain parts of the module come with pre-applied thermal interface material (TIM), ensuring optimal heat dissipation and improving overall thermal performance.

Infineon offers a range of variants for the 1.2kV and 2kV modules. The 1.2kV variants are available with resistances of 5mΩ 180A, 2mΩ 420A, and 1mΩ 560A. For the 2kV modules, resistances of 4mΩ 300A and 3mΩ 400A are offered. In the first quarter of next year, Infineon plans to release 1.2kV 3mΩ and 2kV 5mΩ versions, providing even more options for customers.

These new SiC mosfet half bridges find applications in various industries, including solar power, server technology, energy storage systems, vehicle chargers, traction systems, commercial induction cooking, and power conversion. The high power density and efficiency of SiC technology make it an ideal choice for these demanding applications.