SweGaN Secures RF Strategic Backing for Joint Product Development

GaN-on-SiC wafer developer SweGaN has recently announced a significant strategic investment and product development deal with RFHIC, a prominent company based in South Korea. This collaboration aims to foster joint research and development initiatives centered around the gallium nitride on silicon carbide wafers that have been pioneered by SweGaN. While the exact financial details of the investment remain undisclosed, the partnership signifies a pivotal moment for both companies in the realm of semiconductor technology.

For the past decade, SweGaN has been at the forefront of developing cutting-edge GaN-on-SiC epitaxial solutions tailored for RF and power devices. These innovative solutions have found applications in a diverse range of sectors including 5G telecommunications infrastructure, defense radars, satellite communications, on-board chargers, and data centers. The strategic investment from RFHIC is poised to propel SweGaN's market penetration in the realm of RF and microwave devices, enabling the company to bolster its in-house manufacturing capabilities and enhance its research and development endeavors.

"With the escalating demand for high-performance semiconductor materials to power a myriad of applications and enhance efficiency in an energy-conscious world, the infusion of new equity investment will bolster SweGaN's capacity expansion plans for its best-in-class GaN-on-SiC epitaxial wafers. This investment will also facilitate collaborative product development ventures with RFHIC," stated Jr-Tai Chen, the CEO, and Founder of SweGaN.

The higher performance SiC substrate utilized by SweGaN allows for the creation of high-power RF chips crucial for applications in 5G communications and radar systems. This technological advancement underscores SweGaN's commitment to pushing the boundaries of semiconductor innovation and meeting the evolving needs of the industry.

"As RFHIC charts its strategic course for GaN semiconductors in response to the surging market demand for products in 5G, 6G, satellite communication, and beyond, SweGaN's high-performance 6-inch GaN epiwafers for RF and power semiconductors, renowned for their exceptional high-power efficiency, align seamlessly with our technological roadmap and our objective to diversify gallium nitride epitaxial wafer suppliers," remarked Dr. Samuel Cho, the CTO, and co-founder of RFHIC.