ROHM and STMicroelectronics Strengthen SiC Wafer Supply Partnership

The recent multi-year agreement between STMicroelectronics and SiCrystal marks a significant milestone in the supply of SiC substrate wafers. The deal, valued at a minimum of $230 million, focuses on the provision of larger volumes of SiC substrate wafers produced in Nuremberg, Germany. Geoff West, EVP and Chief Procurement Officer at STMicroelectronics, expressed optimism about the partnership, stating that the increased supply will bolster their manufacturing capacity for automotive and industrial clients globally.

SiCrystal, a prominent player in the Silicon Carbide industry and a subsidiary of ROHM group, is committed to supporting STMicroelectronics in expanding its Silicon Carbide business. Dr. Robert Eckstein, President and CEO of SiCrystal, emphasized the company's dedication to delivering high-quality 150mm SiC substrate wafers consistently to meet the growing demand from STMicroelectronics.

The adoption of energy-efficient SiC power semiconductors is crucial for driving electrification in the automotive and industrial sectors in a sustainable manner. These advanced technologies play a vital role in enhancing energy generation, distribution, and storage efficiency. By leveraging SiC solutions, industries can achieve cleaner mobility options, reduce emissions in manufacturing processes, and pave the way for a greener energy landscape.

STMicroelectronics is at the forefront of developing technologies that enable smarter mobility, efficient power management, and the widespread integration of cloud-connected autonomous devices. The company's commitment to achieving carbon neutrality by 2027 underscores its dedication to sustainability and environmental responsibility.

For more information about STMicroelectronics, ROHM, and SiCrystal, visit their official websites at www.st.com, www.rohm.com, and www.sicrystal.de.