X-Fab and Soitec Collaborate on SmartSiC Technology in Texas

Belgian foundry X-Fab has announced a partnership with Soitec to utilize the innovative SmartSiC wafers for the production of silicon carbide (SiC) power devices at its manufacturing plant in Lubbock, Texas. This collaboration marks a significant step forward in the advancement of SiC technology in the semiconductor industry.

The successful completion of the assessment phase demonstrated the feasibility of manufacturing SiC power devices on 150mm SmartSiC wafers at X-Fab Texas. Through a joint supply chain consignment model, Soitec will facilitate X-Fab customers' access to the SmartSiC substrate, particularly targeting automotive and power applications.

SmartSiC, a proprietary technology developed by Soitec, is based on the company's innovative SmartCut process. This process involves splitting off a thin layer of high-quality monocrystalline 'donor' wafer and bonding it to a low resistivity polycrystalline 'handler' wafer, resulting in a substrate with enhanced device performance and manufacturing yields.

One of the key advantages of the SmartSiC substrate is its ability to enable the design of smaller and more efficient devices. By increasing the number of dies per wafer and reducing costs, X-Fab customers can achieve significant improvements in both performance and cost-effectiveness.

In addition to the technical benefits, the use of SmartSiC substrates also aligns with X-Fab's sustainability goals. The reduction in CO2 emissions during the substrate manufacturing process contributes to the company's overall initiative to minimize its carbon footprint and promote environmentally friendly practices.