CGD Advances with High-Power GaN Technology

Cambridge GaN Devices (CGD) has recently introduced a higher power version of its 650V integrated GaN transistor, known as the ICeGaN P2 series. This new series boasts an impressive RDS(on) as low as 25 mΩ, making it suitable for multi kW power levels. While the device is rated to 650V, it is currently being characterized for 800V, showcasing its potential for high-power applications.

The P2 series incorporates the on-chip Miller Clamp, a feature carried over from the previous H2 series, which effectively eliminates shoot-through losses during fast switching. Additionally, the implementation of 0 V turn off helps minimize reverse conduction losses. CGD has also developed a new thermally-enhanced package to accommodate the larger die, further reducing on-resistance.

According to Peter di Maso, Vice President Business Development at CGD, "It is a bigger chip but we improved the gate circuit so while it is twice the current it is not twice the size." This optimization allows the P2 to utilize any IGBT or MOSFET gate driver, offering flexibility and ease of integration.

The P2 features a standard 20V voltage on the gate, an increased threshold voltage, and a Miller clamp to eliminate the need for a negative power supply. With current sense and light load capabilities, the device is designed for efficient performance across various operating conditions.

Furthermore, the P2 is housed in a 10 x 10mm package with enhanced thermal characteristics. The flip chip dual side cooling design provides an excellent thermal path from the source to ensure optimal thermal performance. The dual-gate pinout of the DHDFN-9-1 package enables simple paralleling for scalability, catering to multi kW applications with ease.