WIN Semi Unveils mmWave GaN-on-SiC Process

The latest technological breakthrough in the semiconductor industry is set to revolutionize power applications with the introduction of the NP12-0B platform. This cutting-edge platform provides moisture resistance, enabling the use of plastic packages for power applications, a significant advancement in the field.

At the core of the NP12-0B platform is a 120nm RF GaN HEMT process designed for deep saturation/high compression pulsed and continuous wave conditions. This innovative technology addresses the pulse droop behavior commonly observed in GaN HEMT power amplifiers, leading to improved range and sensitivity in pulsed mode radar systems, as highlighted by WIN, the company behind the development.

The NP12-0B platform supports full MMICs, empowering customers to create compact pulsed or CW saturated power amplifiers for applications operating at frequencies up to 50GHz. With qualification for 28V operation, the platform delivers impressive performance in the 29GHz band, boasting saturated output power of 4.5 watts/mm, 12dB linear gain, and over 40 percent power added efficiency.

Having reached the beta release stage, the NP12-0B platform is now available for early access multiproject wafer runs. The completion of qualification testing and the upcoming final modeling/PDK generation, expected to conclude in August 2024, pave the way for the full production release scheduled for late 3Q24, marking a significant milestone in the semiconductor industry.

For more information on the NP12-0B platform and other innovative semiconductor solutions, visit www.winfoundry.com.