Infineon Introduces Space-Qualified Parallel Interface F-RAM

Infineon Technologies has expanded its portfolio of memories with the introduction of F-RAM products that offer unparalleled reliability and endurance. These devices boast up to 120 years of data retention at 85 degrees Celsius, providing random access and full memory write capabilities at bus speeds.

The F-RAM devices from Infineon are specifically designed to be rad hard, making them ideal for the demanding mission requirements of space-based applications. Traditionally, such applications have relied on slower and less rugged EEPROM nonvolatile storage devices. The key features of Infineon's F-RAM devices include faster memory random access, enhanced data security through instant non-volatile write technology, and low power consumption.

Helmut Puchner, Vice President and Fellow Aerospace and Defense at Infineon Technologies, highlighted the increasing need for high-reliability non-volatile memory in space applications. As data processing moves on-system rather than relying on ground telemetry, there is a growing demand for memory solutions that can work seamlessly with space-grade processors and FPGAs for data-logging applications.

The rad hard F-RAM devices find applications in various scenarios, such as data storage for sensors and instruments, data logging for calibration data, secure key storage for data encryption, and boot code storage. These devices are not limited to outer space but are also suitable for avionic and military-grade applications that require a wide temperature range.

Infineon's parallel interface F-RAM devices offer unique advantages due to their chemical composition, enabling instantaneous switching of atomic states for programming bits. Unlike EEPROM technologies that rely on trapped charges, F-RAM is inherently immune to soft errors, magnetic fields, and radiation effects. With near infinite endurance and no need for wear leveling, these devices provide a reliable and long-lasting memory solution.