TI and Delta Collaborate on Taiwan GaN R&D Lab

Texas Instruments (TI) and Delta Electronics have joined forces to establish a cutting-edge joint research and development lab focused on advancing electric vehicle (EV) onboard charging and power systems. The collaboration aims to leverage gallium nitride (GaN) technologies to drive innovation in the EV industry.

The newly inaugurated lab, located in Pingzhen, Taiwan, will serve as a hub for collaborative R&D efforts between TI and Delta. By combining the expertise and resources of both companies, the lab is set to revolutionize the design and performance of EV charging systems, with a focus on enhancing power density, efficiency, and affordability.

As part of the collaboration, the development process is divided into three distinct phases. In the initial phase, Delta will concentrate on creating a lightweight and cost-effective 11kW onboard charger, utilizing TI's state-of-the-art C2000 real-time microcontrollers and proprietary active electromagnetic interference (EMI) filter products. These innovations are expected to reduce charger size by 30% while achieving exceptional power conversion efficiency of up to 95%.

Moving into the second phase, TI and Delta will integrate the C2000 platform for ASIL D safety applications, incorporating highly integrated automotive isolated gate drivers to enhance the power density of onboard chargers and further shrink their overall footprint.

In the final phase of development, the two companies will collaborate on designs incorporating GaN technology, aiming to push the boundaries of EV power system performance and efficiency.