The IQE Interview: Navigating GaN Geopolitics

Rodney Pelzel, CTO of IQE, recently shared insights with eeNews Europe regarding the company's strategic plans to broaden the application of gallium nitride (GaN) in power and microLED technologies.

IQE, a prominent supplier of epitaxial wafers based in the UK, caters to a diverse range of applications, including VCSEL vertical lasers and GaN-on-silicon for RF applications. With the evolving geopolitical landscape placing greater emphasis on the supply of GaN wafers and power devices in the US and Europe, IQE is strategically positioning itself in these key markets.

Pelzel highlighted IQE's extensive experience with GaN, tracing back to its origins in the US two decades ago with military RF applications. Over the years, IQE has developed a successful product portfolio and explored various substrates and architectures to enhance GaN technology.

Discussing the company's focus on power applications, Pelzel mentioned that GaN on Si has been a significant area of development, with ongoing customer engagement and qualification processes. He emphasized the importance of a proprietary buffer in GaN technology, which IQE closely guards to maintain a competitive edge.

As part of its diversification strategy, IQE is actively involved in both power and microLED sectors. The company currently manufactures GaN on Silicon in the US and collaborates with partners in Europe, such as Kopin and the European Space Agency (ESA), to drive innovation and expand its global footprint.