Infineon Expands CoolSiC 750V MOSFETs with Ultra-Low RDS(on)

Infineon Technologies has recently unveiled an expansion of its CoolSiC MOSFET 750V G2 family, introducing new package options that are specifically tailored to enhance efficiency and power density in automotive and industrial power conversion applications. These latest devices are characterized by their very low on-resistance and packaging that is engineered to meet stringent thermal and reliability requirements, as reported by the company.

For engineers and designers in the power electronics sector, this announcement represents a significant development in addressing two key challenges simultaneously: enhancing system efficiency while reducing form factors. The introduction of these new devices has the potential to open up a wider range of design possibilities across rapidly growing markets such as electric vehicles (EVs), charging infrastructure, and high-efficiency power supplies.

Expanding Options for Automotive and Industrial Power

The extended CoolSiC MOSFET 750V G2 portfolio now includes packages like Q-DPAK and D2PAK, featuring typical RDS(on) values that can go as low as 60 mΩ at 25°C. Infineon has identified applications in onboard chargers, high-voltage to low-voltage DC-DC converters in vehicles, server and telecom switched-mode power supplies, as well as EV charging infrastructure as key targets for these devices.

Devices with even lower on-resistance, reaching values as low as 4 mΩ, are specifically designed for applications that require exceptional static switching performance. These applications include eFuses, high-voltage battery disconnects, solid-state circuit breakers, and solid-state relays. Lower conduction losses in such scenarios directly translate to higher efficiency, reduced thermal stress, and more compact system designs.

Enhanced Packaging and Performance Features

A standout feature of the new family is Infineon’s top-side cooled Q-DPAK package, which is engineered to optimize thermal performance in high-power settings. By enhancing heat dissipation, this package enables higher power density and improved system reliability, particularly in compact automotive and industrial designs where space is limited.

When it comes to device performance, the CoolSiC MOSFET 750V G2 technology boasts impressive figures of merit, including favorable RDS(on) x QOSS and best-in-class RDS(on) x Qfr, according to the company. These characteristics play a crucial role in reducing switching losses in both hard-switching and soft-switching topologies, offering significant advantages in hard-switching scenarios where efficiency margins are often critical.

Furthermore, the devices prioritize robustness. Infineon emphasizes a high threshold voltage, with a typical VGS(th) of 4.5 V at 25°C, and an ultra-low QGD/QGS ratio to enhance immunity against parasitic turn-on effects. The extended gate-drive capability supports static gate voltages as low as –7 V and transient voltages down to –11 V, providing designers with additional flexibility and compatibility when integrating devices in complex power stages.