Infineon’s CoolSiC MOSFETs Chosen for Toyota’s bZ4X

Infineon has announced that its silicon carbide power semiconductors have been chosen for Toyota’s latest bZ4X battery-electric vehicle. The company’s CoolSiC MOSFETs will be integrated into the on-board charger (OBC) and the DC/DC converter, showcasing a significant step in SiC adoption within key vehicle power-conversion components.

This development provides valuable insight for eeNews Europe readers into the accelerating trend of SiC utilization beyond traction inverters. Automakers are increasingly turning to wide-bandgap devices like CoolSiC MOSFETs to achieve tangible benefits in electric vehicles, such as faster charging times and extended driving ranges.

SiC Integration in Toyota’s EV Power Electronics

Infineon revealed that Toyota has specifically opted for its CoolSiC MOSFETs in the OBC and DC/DC converter of the bZ4X model. These subsystems play a crucial role in enhancing charging efficiency, thermal performance, and packaging density, underscoring the importance of SiC technology in advancing electric vehicle capabilities.

The inherent advantages of silicon carbide, including low losses, high thermal resistance, and superior voltage capability, are cited by Infineon as key factors driving improved system-level performance. These material benefits translate into practical advantages for EVs, supporting increased range and reduced charging durations.

Infineon positioned this collaboration with Toyota as part of the broader shift towards electrified mobility, emphasizing the pivotal role of power electronics as a key differentiator for automotive manufacturers in the evolving landscape of electric vehicles.

“We are delighted that Toyota, a global automotive leader, has selected Infineon’s CoolSiC technology. Silicon carbide plays a crucial role in enhancing the efficiency, range, and overall performance of electric vehicles, making it a vital component in the future of mobility,” stated Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. “With our unwavering commitment to innovation and quality, we are well-equipped to meet the rising demand for power electronics in the realm of electromobility.”

Trench-Gate CoolSiC Enhances Efficiency and Drive Circuits

Infineon highlighted that its CoolSiC MOSFETs feature a trench gate structure designed to minimize normalized on-resistance and reduce chip size. This design aspect contributes to lowering conduction and switching losses, a critical factor in enhancing efficiency within automotive power conversion systems.

The release also emphasized device-level optimizations aimed at facilitating high-density, high-reliability designs in OBC and DC/DC applications. Infineon pointed to optimized parasitic capacitance and gate threshold voltage, enabling unipolar gate drive that simplifies gate driver circuitry in automotive power systems.

With the recent integration into the bZ4X model, Infineon is positioning CoolSiC as a versatile SiC platform suitable for a growing array of electrified vehicle subsystems transitioning to wide-bandgap power devices.