Revolutionary SMD Package Enhances 650V Auto MOSFETs with Top-Side Cooling

Infineon Introduces New Surface-Mount Package for MOSFET Die

Infineon, a leading semiconductor manufacturer, has announced the integration of its 650V MOSFET die from the CFD7A portfolio into a surface-mount package. This new package offers improved electrical performance compared to the well-known TO247 through-hole devices. The company claims that this advancement enables more efficient energy utilization in onboard chargers and DC-DC converters.

The new package, named 'QDPAK TSC', is a top-side-cooled package. It was initially announced earlier this year and has now been registered with JEDEC, a leading standards organization for the microelectronics industry. Alongside the QDPAK TSC, Infineon has also introduced a similar package for TO220 called DDPAK.

Infineon's 650V 17mΩ (max) IPDQ65R017CFD7A MOSFET can handle a current of 86A at 100°C (or 136A at 25°C). It is designed to operate within a wide temperature range, with its junction capable of withstanding temperatures between -40 and +125°C. The junction to case resistance is 0.18°C/W, allowing for efficient heat dissipation. At 25°C, the MOSFET can dissipate up to 694W of power.

One notable feature of the IPDQ65R017CFD7A is its total gate charge of 236nC at 400V and 61.6A drain, with a gate voltage range of 0-10V. To aid in switching, a separate source connection is provided for gate drive.

With the introduction of this new surface-mount package, Infineon aims to provide engineers and designers with a more efficient and compact solution for their onboard charger and DC-DC converter designs. The improved electrical performance and thermal characteristics of the QDPAK TSC package make it an attractive option for applications requiring high power and reliability.