ROHM develops SiC MOSFETs for high-temperature power systems

ROHM has recently unveiled its 5th-generation silicon carbide devices, designed to reduce conduction losses in demanding power conversion systems. The company claims that the latest SiC MOSFETs can decrease on-resistance by approximately 30% at high temperatures compared to the previous generation, all while maintaining the same breakdown voltage and chip size.

This development is significant for readers of eeNews Europe as thermal performance continues to be a critical factor in electric drivetrains and high-density industrial power systems. It also signifies a shift in the design of SiC MOSFETs from early adoption to more widespread use in automotive, data center, and energy infrastructure applications.

Enhanced Performance in Challenging Environments

The newest addition to ROHM’s EcoSiC lineup is tailored for applications where efficiency and heat management are closely intertwined, such as traction inverters in electric vehicles, onboard chargers, DC-DC converters, and industrial power supplies. Additionally, ROHM is targeting markets like AI servers, data centers, photovoltaic inverters, energy storage systems, and UPS platforms.

One of the key improvements is the 30% reduction in on-resistance during high-temperature operation at a junction temperature of 175°C. This enhancement could assist designers in minimizing conduction losses in systems that operate at elevated temperatures or under continuous high loads. In automotive powertrains, this advancement may enable smaller or potentially higher-output inverter stages, while in industrial settings, it could enhance efficiency in power conversion units with limited thermal headroom.

Expansion of SiC Technology

ROHM disclosed that it commenced support for the bare-die business for the 5th generation SiC MOSFETs in 2025 and completed development by March 2026. Samples of discrete devices and modules utilizing this technology are slated for release starting in July 2026.

The next phase involves expanding the product portfolio. ROHM intends to introduce more breakdown voltage and package options while also focusing on developing design tools and providing application support. This holistic approach is crucial as the broader adoption of SiC hinges not only on device performance but also on packaging, qualification, and the seamless integration of components into complete power systems.