High-Speed Driver Boosts GaN Power Transistors

Innoscience Technology has recently unveiled a cutting-edge gate driver specifically designed for GaN power transistors. The single-channel INS1001DE is a groundbreaking solution aimed at delivering fast, powerful voltage-regulated waveforms to the gates of these transistors, which are known for their extreme sensitivity to over-voltage stress.

The output pulse amplitude of the INS1001DE is precisely controlled by a low-drop-out regulator using two resistors. For instance, it can be set to 6V, a common specification for enhancement-mode GaN HEMTs. This meticulous control ensures optimal performance and protection for the transistors.

One of the key features of the INS1001DE is its internal logic supply mechanism. A separate internal LDO provides a stable 5V output for the internal logic of the gate driver, sourced from an external supply ranging from 6V to 20V. While the gate driver does not include isolation, it offers a 5V output to power an external front-end digital isolator, enhancing flexibility and compatibility.

The output stage of the gate driver is meticulously designed for efficiency and precision. It features a 1.3Ω pull-up and a 500mΩ pull-down, with separate pads that allow for the customization of turn-on and turn-off times using distinct pull-up and pull-down resistors. This design enables users to fine-tune the performance of the gate driver according to their specific requirements.

With a gate capacitance of 1nF, the INS1001DE offers impressive rise and fall times, with typical rise times as low as 10ns and fall times as low as 3ns. The propagation delay through the device is minimal, at 35ns (with a maximum of 50ns), ensuring rapid and precise signal processing.

According to Min Chen, the Vice President of IC Design at Innoscience, "The INS1001DE is perfectly tailored to optimize the performance of enhancement-mode GaN HEMTs, particularly Innoscience's own e-mode InnoGaN technology." This endorsement highlights the exceptional compatibility and synergy between the gate driver and GaN power transistors, promising enhanced efficiency and reliability in power electronics applications.