Renesas Achieves 9600 MT/s with Gen6 DDR5 RCD

Renesas Electronics has unveiled what it claims is the industry’s first sixth-generation Registered Clock Driver (RCD) for DDR5 RDIMMs, pushing performance to a record 9600 MT/s. The announcement marks a substantial leap beyond the company’s prior Gen5 device, which topped out at 8800 MT/s. The new RCD targets next-generation data-center architectures that are rapidly scaling memory bandwidth to support AI and high-performance computing requirements.

For eeNews Europe readers designing advanced server, AI, or HPC systems, this performance milestone highlights where memory subsystem architectures are heading — and what design teams will need to prepare for in future platforms.

Performance gains and architecture enhancements

The Gen6 DDR5 RCD introduces a 10% bandwidth increase compared to Renesas’s Gen5 platform, delivering 9600 MT/s while maintaining backward compatibility for a smooth upgrade path. This jump is enabled by a strengthened signal-integrity architecture and improved power-efficiency techniques aimed squarely at AI, HPC, and large-language-model workloads.

Renesas expanded its Decision Feedback Equalization (DFE) architecture to eight taps with 1.5 mV granularity, giving system designers significantly more margin-tuning precision at higher data rates. The addition of Decision Engine Signal Telemetry and Margining (DESTM) provides real-time visibility into signal quality and system-level diagnostics — capabilities that become increasingly important as interface speeds approach 10 GT/s.

With memory bandwidth emerging as a critical bottleneck for modern SoCs, Renesas’s Gen6 RCD is designed to keep pace with escalating server-side demands. According to the company, the new device results from deep collaboration with CPU and DRAM providers, as well as hyperscale customers deploying advanced RDIMM technologies.

AI and server-class market drivers

“Explosive growth of generative AI is fueling higher SoC core count. This is driving unprecedented demand for memory bandwidth and capacity as a critical enabler of data center performance,” said Sameer Kuppahalli, Vice President of Memory Interface Division at Renesas. “Our sixth generation DDR5 Registered Clock Driver demonstrates Renesas’ continued commitment to memory interface innovation, path-finding and delivering solutions to stay ahead of market demand.”

Samsung echoed these market pressures, noting its continued collaboration with Renesas. “Samsung has collaborated with Renesas across multiple generations of memory interface components, including the successful qualification of Gen5 DDR5 RCD and PMIC5030,” said Indong Kim, VP of DRAM Product Planning, Samsung Electronics. “We are now excited to integrate Gen6 RCD into our DDR5 DIMMs, across multiple SoC platforms to support the growing demands of AI, HPC, and other memory-intensive workloads.”

Targeted at next-generation server platforms, Renesas’s RRG5006x Gen6 RCD is now sampling to select partners, including all major DRAM suppliers. The company noted that it expects full production in the first half of 2027.