Toshiba SiC MOSFET Samples for 800V AI Data Centers

Toshiba has recently initiated test-sample shipments of a 1200V trench-gate SiC MOSFET known as the TW007D120E, specifically tailored for power supply systems in AI data centres. Encased in a QDPAK top-side cooled package, this innovative device is engineered to bolster higher current capability, enhance thermal performance, and elevate power density in the power stage.

This development holds significance for eeNews Europe readers due to the evolving landscape of AI data centre power architectures, which are transitioning towards higher voltages and stricter efficiency benchmarks. It also underscores the expansion of SiC MOSFET technology beyond its traditional domains of electric vehicles and renewable energy applications, penetrating into the realm of server infrastructure.

800V HVDC Drives Power Design Changes

The surge in generative AI is exerting mounting pressure on data centre power systems, particularly as high-power AI servers fuel the need for more efficient conversion stages. Toshiba highlights the increasing adoption of 800V HVDC architectures as a key driver necessitating lower-loss, higher-density switching devices.

The TW007D120E amalgamates low conduction loss, minimal switching loss, and enhanced heat dissipation capabilities. While primarily targeted at AI data centre power supplies, Toshiba also identifies photovoltaic inverters, uninterruptible power supplies, EV charging stations, and energy storage systems as potential application areas.

Trench-Gate Structure Lowers Resistance

Employing Toshiba’s trench-gate SiC structure, the 1200V MOSFET achieves a typical RDS(on) of 7.0mΩ, accompanied by 33nC gate-drain charge and 172A DC drain current. In comparison to Toshiba’s third-generation 1200V SiC MOSFET, the TW007D120E slashes on-resistance per unit area by approximately 58%, while also boasting a roughly 52% enhancement in the RDS(on) × Qgd figure of merit, which delineates the conduction versus switching losses trade-off.

The MOSFET is compatible with a gate drive voltage ranging from 15V to 18V, offering potential benefits for designers in terms of reduced heat generation and enhanced efficiency within compact data centre power systems.

Toshiba is gearing up to transition the TW007D120E into mass production by fiscal year 2026. Furthermore, the company envisions expanding the product lineup, with plans underway for development tailored to automotive applications.