Revolutionary SMD Package Enhances 650V Automotive MOSFETs with Top-Side Cooling

Infineon Introduces New Surface-Mount Package for Improved Electrical Performance

Infineon, a leading semiconductor manufacturer, has recently announced the integration of its 650V mosfet die from the CFD7A portfolio into a surface-mount package. This new package offers improved electrical performance compared to the well-known TO247 through-hole devices. The company claims that this advancement will enable more efficient energy utilization in onboard chargers and dc-dc converters.

The new package, named 'QDPAK TSC', is a top-side-cooled package. It was initially announced earlier this year and has now been registered with JEDEC, a leading standards organization for the microelectronics industry. Alongside the QDPAK TSC, Infineon has also introduced a similar package for TO220, called DDPAK.

One of the key features of the 650V 17mΩ (max) IPDQ65R017CFD7A, the mosfet die used in the new package, is its high current-carrying capability. It can handle up to 86A at 100°C (or 136A at 25°C). Additionally, it can operate within a wide temperature range, from -40 to +125°C. The junction to case resistance is 0.18°C/W, allowing for efficient heat dissipation. At 25°C, the package can dissipate up to 694W of power.

Another notable feature of the new package is its total gate charge of 236nC at 400V and 61.6A drain, with a gate voltage range of 0-10V. To aid in switching, a separate source connection is provided for gate drive.

With the introduction of this new surface-mount package, Infineon aims to provide engineers and designers with a more efficient and compact solution for onboard chargers and dc-dc converters. The improved electrical performance and high current-carrying capability of the mosfet die make it an ideal choice for applications requiring high power and energy efficiency.