1.2kV IGBT module for industrial designs

Mitsubishi Electric is to start sampling a 1200V IGBT power module for industrial applications.

The LV100 will start sampling on 15th February for solar and other renewable-energy power-supply systems such as storage battery inverters. It uses an eighth-generation insulated gate bipolar transistor (IGBT) with a module layout that supports a current rating of 1,800A, which is 1.5 times higher than that of the previous CM1200DW-24T devices.

The IGBTs use a new split-dummy-active (SDA) architecture that optimizes the gate capacity by dividing the gate dummy trench into two stages. This is combined with a controlling-carrier plasma-layer (CPL) that forms a deep N-doped layer on the back of the chip to provide carrier control during dynamic operation. These together reduce power loss by approximately 15%

The module’s conventional package is easy to connect in parallel and can accommodate inverter configurations spanning a wide range of capacitances.

• Mitsubishi aims to dominate the power device business
• 2kV IGBT module for industrial designs

This follows samples of two S1-Series High Voltage IGBT (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters that started shipping earlier this month.

The new S1-Series modules incorporate Mitsubishi Electric’s proprietary Relaxed Field of Cathode (RFC) diode, which increases the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times compared to previous models for improved inverter reliability.

These use IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure to reduce both power loss and thermal resistance for more efficient inverters. A proprietary insulation structure increases the insulation voltage resistance to 6.0kVrms, 1.5 times that of previous products, resulting in more flexible insulation designs for compatibility with a wide range of inverter types.