650V Power MOSFET Halves On Resistance

Vishay Intertechnology has introduced its fourth generation 650 V superjunction power MOSFET, which boasts a halved on-resistance, catering to telecoms, industrial, and computing applications. The n-channel SiHK050N65E from Vishay Siliconix significantly reduces on-resistance by 48.2% to 0.048 Ω at 10 V compared to its predecessors. Moreover, it offers a 65.4% lower resistance times gate charge, a crucial figure of merit for 650 V MOSFETs utilized in power conversion applications.

The SiHK050N65E, part of the Gen 4.5 650 V E Series family, is designed to enhance efficiency and power density in power factor correction (PFC) and subsequent DC-DC converter blocks. This advancement aligns with the growing demand for improved power systems in various applications, including servers, edge computing, supercomputers, UPS, HID lamps, telecom SMPS, solar inverters, welding equipment, induction heating, motor drives, and battery chargers.

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The E Series superjunction technology delivers a typical on-resistance of 0.048 Ω at 10 V, enabling higher power ratings exceeding 6 kW. With an additional breakdown voltage of 50 V, the 650 V MOSFET caters to input voltages ranging from 200 VAC to 277 VAC, meeting the Open Compute Project’s Open Rack V3 (ORV3) standards.

Furthermore, the SiHK050N65E MOSFET features a gate charge as low as 78 nC, resulting in a figure of merit of 3.74 Ω*nC. This translates to reduced conduction and switching losses, enhancing energy efficiency and meeting stringent requirements for server power supplies, aiming for peak efficiency levels of up to 96%.

To optimize switching performance in hard-switched topologies like PFC and two-switch forward designs, the MOSFET offers low typical effective output capacitances Co(er) and Co(tr) of 167 pF and 1119 pF, respectively. The resulting resistance times Co(er) FOM stands at an industry-leading 8.0 Ω*pF, ensuring superior performance in demanding applications.

The SiHK050N65E is packaged in PowerPAK10 x 12 with a Kelvin connection for reduced gate noise and enhanced dv/dt ruggedness. Compliant with RoHS standards and free of halogens, this MOSFET is engineered to withstand overvoltage transients in avalanche mode, with guaranteed limits through 100% UIS testing. Samples and production quantities of the SiHK050N65E are currently available, catering to the evolving needs of modern power systems.