750V SiC MOSFET Resistance Reduced to 4mOhm

Infineon Technologies has recently introduced a new 750V silicon carbide MOSFET known as the CoolSiC G2, designed specifically for automotive and industrial applications. This innovative MOSFET boasts a low on-resistance and reduced gate charge, making it a versatile option for a wide range of uses. With typical R DS(on) values ranging from 4 mΩ to 60 mΩ at 25°C, the CoolSiC G2 is ideal for applications such as on-board chargers, DC-DC converters, electric vehicles, and various industrial applications like EV charging, solar inverters, energy storage systems, telecom, and SMPS.

The low R DS(on) values of 4 and 7 mΩ in the CoolSiC G2 enable lower losses in static-switching applications, including eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. The 4 mΩ value is achieved through a top-side cooled Q-DPAK package, which is engineered to deliver optimal thermal performance and reliability.

• Additionally, Infineon has also introduced a 650V industrial CoolSiC MOSFET in a thin TOLL package and a 2000V SiC MOSFET that enhances power density.

One of the key features of the CoolSiC G2 technology is its improved figure of merit (FoM) derived from the R DS(on) x Q OSS and best-in-class R DS(on) x Q fr, resulting in reduced switching losses in both hard-switching and soft-switching topologies. This leads to superior efficiency in hard-switching scenarios. The reduced gate charge of the MOSFET allows for faster switching speeds and decreased gate drive losses, making it highly efficient in high-frequency applications.

Moreover, the CoolSiC MOSFET 750V G2 offers a high threshold voltage V GS(th),typ of 4.5V at 25°C, along with an ultra-low Q GD/Q GS ratio, enhancing robustness against parasitic turn-on (PTO). The technology also supports extended gate driving capabilities, accommodating static gate voltages of up to -7V and transient gate voltages of up to -11V. This increased voltage tolerance provides engineers with greater design flexibility and compatibility with other devices in the market.

Notably, the CoolSiC 750V G2 MOSFET complies with AEC Q101 standards for automotive-grade parts and JEDEC standards for industrial-grade parts. Samples of the Q-DPAK 4/7/16/25/60 mΩ variants are readily available for ordering, allowing engineers and designers to experience the benefits of this advanced silicon carbide technology firsthand.