Breakthrough: 1D Sub-1nm Transistor Grown by Researchers

Researchers in Korea have made a significant advancement in semiconductor technology by successfully growing two and one-dimensional structures on silicon to construct a transistor with a gate electrode measuring under 1nm.

The team, led by Director JO Moon-Ho of the Center for Van der Waals Quantum Solids within the Institute for Basic Science (IBS), devised a groundbreaking method to achieve epitaxial growth of 1D metallic materials with a width of less than 1nm. This innovative approach was then utilized to create a new structure for 2D semiconductor logic circuits, with the 1D metals serving as a gate electrode.

The International Roadmap for Devices and Systems (IRDS) by the IEEE has projected that semiconductor node technology will advance to around 0.5 nm by 2037, with transistor gate lengths of 12 nm. However, the research team demonstrated that the channel width, modulated by the electric field applied from the 1D MTB gate, can be as small as 3.9 nm, surpassing the futuristic prediction significantly.

Integrated devices based on two-dimensional (2D) semiconductors have been a focal point of research globally. Yet, controlling electron movement within a few nanometers and developing the manufacturing process for these integrated circuits have posed substantial technical challenges.

The research team leveraged the mirror twin boundary (MTB) of molybdenum disulfide (MoS₂), a 2D semiconductor, which acts as a 1D metal with a width of only 0.4 nm. By utilizing this as a gate electrode, they overcame the limitations of the lithography process.

The achievement of a 1D MTB metallic phase through precise control of the crystal structure of the existing 2D semiconductor at the atomic level marks a significant breakthrough. This not only propels next-generation semiconductor technology forward but also contributes to fundamental materials science by showcasing the synthesis of new material phases over large areas through artificial manipulation of crystal structures.

The sub-1nm size of the 1D MTB transistor developed by the research team offers distinct advantages in circuit performance. Unlike technologies such as FinFET, Gate-All-Around, or CFET, which face issues with parasitic capacitance due to complex device structures, the 1D MTB-based transistor can minimize such capacitance owing to its straightforward design and extremely narrow gate width.

"The 1D metallic phase achieved through epitaxial growth represents a novel material process applicable to ultra-miniaturized semiconductor processes. It is poised to emerge as a pivotal technology for the development of various low-power, high-performance electronic devices in the future," remarked JO Moon-Ho.

Source: IBS Korea