CGD Announces Breakthrough 100 kW+ GaN EV Technology

Cambridge GaN Devices (CGD) has recently unveiled new information about a groundbreaking solution designed to meet the demands of electric vehicle (EV) powertrain applications exceeding 100 kW. This particular market segment is estimated to be worth over $10 billion and represents a significant opportunity for CGD to showcase its innovative ICeGaN® gallium nitride (GaN) technology.

The innovative Combo ICeGaN® integrates smart ICeGaN HEMT ICs with Insulated-Gate Bipolar Transistors (IGBTs) within the same module or Intelligent Power Module (IPM). By combining these components, CGD aims to maximize efficiency and provide a cost-effective alternative to the more expensive silicon carbide (SiC) products currently available in the market. The ICeGaN technology enables the benefits of GaN to be harnessed in DC-to-DC converters, on-board chargers, and potentially traction inverters, expanding the application range of CGD’s GaN technology.

One of the key advantages of the proprietary Combo ICeGaN approach is the parallel operation of ICeGaN and IGBT devices, which share similar drive voltage ranges, typically between 0-20 V. This technology also boasts excellent gate robustness, ensuring reliable performance in various operating conditions. The ICeGaN switch demonstrates high efficiency with minimal conduction and switching losses at lower currents, making it ideal for light load scenarios, while the IGBT excels at higher currents, particularly during full load or surge conditions.

Furthermore, Combo ICeGaN leverages the high saturation currents and avalanche clamping capability of IGBTs, combined with the efficient switching characteristics of ICeGaN. The intelligent management of sensing and protection functions optimizes the operation of Combo ICeGaN, enhancing the Safe Operating Area (SOA) of both ICeGaN and IGBT devices across a wide range of temperatures and load conditions.

Dr. Giorgia Longobardi, the Founder and CEO of CGD, expressed enthusiasm for the potential impact of the Combo ICeGaN solution on the EV industry. By merging the advantages of GaN and silicon technologies, CGD aims to deliver a transformative solution that balances cost-effectiveness with high efficiency, ultimately leading to faster charging times and extended driving ranges for electric vehicles. Collaborations with Tier One automotive EV manufacturers and supply chain partners are already underway to bring this innovative technology to the market.

In conclusion, Professor Florin Udrea, the Founder and Chief Technology Officer (CTO) of CGD, highlighted the synergistic relationship between ICeGaN and IGBT technologies within the Combo ICeGaN solution. This unique pairing offers a blend of speed and efficiency, with ICeGaN excelling at light load conditions and IGBT providing robust performance under full load and high-temperature scenarios. The compatibility of these technologies on silicon substrates presents advantages in terms of cost, infrastructure, and manufacturability, positioning Combo ICeGaN as a promising advancement in the field of power devices. CGD anticipates showcasing working demonstrations of Combo ICeGaN by the end of the year, further solidifying its commitment to driving innovation in the EV industry.