Fraunhofer IAF Unveils Latest 1200V GaN Update

Researchers at the Fraunhofer Institute for Applied Solid State Physics (IAF) in Germany are making significant strides in the development of gallium nitride (GaN) transistors with impressive blocking voltages exceeding 1200V. This groundbreaking work is paving the way for more efficient and powerful semiconductor components that are crucial for the energy transition and the advancement of various industries.

The team at Fraunhofer IAF is employing a variety of techniques to achieve these high blocking voltages. They are utilizing GaN high electron mobility transistors (HEMTs) on different substrates such as Si, sapphire, SiC, and GaN itself. By optimizing the material, epitaxy, processing, and device structure, they have successfully demonstrated GaN-on-Si HEMTs with static blocking voltages surpassing 1200V, a significant improvement over the previous limit of 650V.

Dr. Richard Reiner, a scientist at Fraunhofer IAF, emphasizes the importance of these advancements in semiconductor technology for the energy transition and Europe's economic competitiveness. He highlights the role of efficient and cost-effective semiconductor components in driving innovation in mobility and the energy industry, essential for securing Europe's economic strength and transitioning towards a sustainable future.

In a different approach, the researchers are exploring the use of highly insulating carrier substrates like sapphire, SiC, and GaN to eliminate voltage limitations. This strategy opens up new possibilities for manufacturing lateral GaN-on-sapphire HEMTs, which can be produced cost-effectively and integrated into existing production lines. Additionally, vertical GaN technologies offer even greater performance, efficiency, and integration capabilities by enabling current flow vertically through the material layers.

The future looks promising as the researchers at Fraunhofer IAF aim to develop vertical GaN power ICs suitable for industrial applications within the next decade. This ambitious goal aligns with their vision of driving technological advancements towards a climate-neutral society. Dr. Richard Reiner will be presenting the latest developments in lateral and vertical GaN power at the upcoming PCIM 2024 exhibition in Nuremberg, Germany, shedding light on the progress made in GaN technologies and their potential impact on various industries.

For more information on the research and advancements in GaN transistors, visit Fraunhofer IAF's website.