High-Performance 600-V Power MOSFET with Top-Side Cooling

Compared to previous-generation MOSFET devices, the Vishay Siliconix n-channel SiHR080N60E has made significant advancements in power conversion technology. This innovative device slashes on-resistance by 27% and resistance times gate charge by 60%, a key figure of merit for 600-V MOSFETs. These improvements make it ideal for power conversion applications where efficiency and power density are crucial.

Vishay offers a comprehensive range of MOSFET technologies to support various stages of the power conversion process. The SiHR080N60E, part of the fourth-generation 600-V E Series family, is designed to enhance efficiency and power density in power factor correction (PFC) and DC/DC converter blocks. This makes it suitable for a wide range of applications, including servers, edge computing, UPS systems, solar inverters, and more.

Featuring a compact PowerPAK 8 x 8LR package, the SiHR080N60E offers a smaller footprint and lower height compared to previous devices. The package's top-side cooling design ensures excellent thermal performance, allowing for higher current capabilities and increased power density. With gullwing leads for enhanced temperature cycle capability, this MOSFET is a reliable and efficient solution for demanding power applications.

Utilizing Vishay's latest energy-efficient E Series superjunction technology, the SiHR080N60E boasts low on-resistance and ultra-low gate charge. This results in an industry-low figure of merit, translating to reduced conduction and switching losses for improved energy efficiency. The MOSFET's switching performance is optimized for hard-switched topologies, making it a versatile choice for various power system designs.

In addition to its technical capabilities, the SiHR080N60E is RoHS-compliant and halogen-free, meeting environmental standards. It is designed to withstand overvoltage transients through rigorous testing, ensuring reliability in demanding operating conditions. Samples and production quantities of this advanced MOSFET device are currently available, offering engineers a cutting-edge solution for their power conversion needs.