High-Power 150V N-Channel MOSFET for Efficient Supplies

Toshiba Electronics Europe has introduced two new 150V N-channel MOSFETs aimed at enhancing the performance of power supply designs. These MOSFETs, known as TPH1100CQ5 and TPH1400CQ5, are built on Toshiba's cutting-edge U-MOS X-H Trench process, which offers improved reverse recovery characteristics crucial for synchronous rectification applications.

Specifically engineered for high-performance switching power supplies used in data centers, communication base stations, and various industrial applications, the TPH1100CQ5 and TPH1400CQ5 devices boast a maximum drain-source voltage (VDSS) rating of 150V. The TPH1100CQ5 can handle a drain current (ID) of 49A, while the TPH1400CQ5 supports 32A. Additionally, both MOSFETs feature a maximum drain-source on-resistance (RDS(ON)) of 11mΩ and 14mΩ, respectively.

Toshiba has also developed a G0 SPICE model for quick circuit function verification and highly accurate G2 SPICE models to precisely replicate transient characteristics. These advancements underscore Toshiba's commitment to delivering innovative solutions that meet the evolving needs of power supply designers.

The enhanced reverse recovery characteristics of the n-channel MOSFETs play a pivotal role in synchronous rectification applications. For instance, the TPH1400CQ5 demonstrates a remarkable 73% reduction in reverse recovery charge (Qrr) to 27nC (typ.) and achieves a reverse recovery time (trr) of 36 ns (typ.), which is approximately 45% faster than Toshiba's previous TPH1400CQH model with similar voltage and RDS(ON) specifications.

When utilized in synchronous rectification scenarios, the TPH1400CQ5 effectively minimizes power losses in switching power supplies, thereby enhancing overall efficiency. In circuits operating in reverse recovery mode, these new MOSFETs mitigate spike voltages generated during switching, leading to improved EMI characteristics and reduced reliance on external filtering components. Encased in a compact surface-mount SOP Advance(N) package measuring just 4.9mm x 6.1mm x 1.0mm, the devices offer versatility and space-saving benefits.