High-Voltage Gate Drivers for 62mm SiC MOSFET and Si IGBT up to 1700V

Power Integrations, a leading provider of high-performance gate drivers, is now sampling a family of plug-and-play gate drivers designed for 62 mm SiC MOSFET and silicon IGBT modules. These gate drivers are rated up to 1700 V and come with enhanced protection features to ensure safe and reliable operation.

The new SCALE-2 2SP0230T2x0 dual-channel gate drivers are equipped with short-circuit protection that activates in less than two microseconds. This feature is crucial in protecting the compact SiC MOSFETs against damaging over-currents. Additionally, the drivers include advanced active clamping (AAC) to safeguard the switches against over-voltage during turn-off, enabling higher DC link operating voltages.

"The gate drivers are flexible; the same hardware can be used to drive either SiC MOSFET or IGBT modules," says Thorsten Schmidt, a representative from Power Integrations. "This reduces both system design and sourcing challenges, and the plug-and-play approach speeds up development."

These gate drivers are suitable for various applications, including railway auxiliary converters, offboard EV chargers, and STATic synchronous COMpensator (STATCOM) voltage regulators for the power grid. Their compact size, measuring 134 x 62 mm, provides reinforced isolation at 1700 V, making them ideal for up to 1700 V operation.

For more information about Power Integrations and their new plug-and-play gate drivers, visit their website at www.power.com.