Infineon combines silicon and SiC in plug and play module

Infineon Technologies has combined silicon and silicon carbide for a more cost effective power module for e-mobility.

The Infineon HybridPACK Drive G2 Fusion is the first plug and play power module providing a balance between performance and cost efficiency with SiC and IGBT devices giving more choice in the optimization of inverters.

One of the main differences between silicon and SiC in power modules is that SiC has a higher thermal conductivity, breakdown voltage and switching speed, making it more efficient, but also more expensive than silicon-based power modules.

The HybridPACK Drive G2 Fusion module features up to 220 kW in the 750 V class across the entire temperature range from -40 °C to +175 °C and improved thermal conductivity. It combines CoolSiC technology and EDT3 silicon IGBT with very fast turn-on from a single gate driver or dual gate drivers.

The module reduces the SiC content per vehicle while maintaining vehicle performance and efficiency at a lower system cost. For example, system suppliers can achieve almost the same system efficiency as a full SiC solution with only 30 percent SiC and 70 percent silicon area.

“Our new HybridPACK Drive G2 Fusion module underlines Infineon’s innovation leadership in the automotive semiconductor industry,” said Negar Soufi-Amlashi, Senior Vice President & General Manager High Voltage at Infineon’s Automotive division. “Addressing the demand for greater e-mobility range, this technological breakthrough smartly combines silicon carbide and silicon. Integrated in a well-introduced module package footprint it offers compelling cost-performance ratio over pure silicon carbide modules without adding system complexity for automotive system suppliers and vehicle manufacturers.” 

The drop in module allows easy re-design from full silicon or full SiC based inverters to a fusion inverter, and can use Swoboda or XENSIV Hall sensors in the HybridPACK Drive package for more precise and efficient motor control.