IQE X fab partnership for GaN up to 1200V

Belgian foundry X-fab is collaborating with substrate supplier IQE to establish a European supply chain for gallium nitride (GaN) power devices up to 1200V. The two companies have entered into a two-year Joint Development Agreement (JDA) with the aim of creating a European-based GaN platform, starting initially with 650V devices. Leveraging IQE’s GaN epitaxy design and process expertise, which is already serving GaN developers, the devices will be manufactured at X-fab for various applications in automotive, datacenter, and consumer electronics.

The existing capabilities of X-fab include the production of 650V depletion mode (d-mode) and HEMT GaN devices on 200mm wafers at its fab in Dresden, Germany. This enables support for a customer’s process or standard process blocks, incorporating advanced processing technologies like microtransfer printing (µTP), copper redistribution layer (Cu-redistribution layer), thick metal layers, and wafer thinning.

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The partnership with IQE is not only focused on the current 650V devices but also lays the groundwork for future product development, with plans to extend beyond 650V to target 1200V devices. Jörg Doblaski, Chief Technology Officer at X-Fab, expressed, “By combining our long-standing expertise in GaN device fabrication and design enablement with IQE’s epitaxy leadership, we are creating a unique, turnkey GaN Power platform. This collaboration offers a compelling alternative to existing supply chain models and bolsters Europe’s position in next-generation power semiconductor technology.”

Europe already boasts a significant presence in GaN production. Nexperia has been enhancing its fab in Hamburg, Germany with 200mm wafer reactors to cater to the GaN market in Europe. Additionally, Infineon Technologies stands out as a major supplier of GaN from its European fabs, including 300mm wafers at Villach in Austria.

Commenting on the agreement, Jutta Meier, Interim Chief Executive Officer and Chief Financial Officer of IQE, stated, “Building on our GaN epitaxy expertise and recent investment in additional GaN reactor capacity, this agreement aligns with our GaN diversification strategy, expands our customer reach, and accelerates time-to-market for GaN Power applications.” The collaboration between X-fab and IQE signifies a significant step towards establishing a robust European supply chain for GaN power devices, paving the way for advancements in power semiconductor technology.