Major Investment: $200m for 200mm GaN and SiC in Hamburg

Nexperia, a leading semiconductor manufacturer, has announced a substantial investment of €184 million ($220 million) into its site in Hamburg, Germany. The investment aims to enhance research and development capabilities as well as process development for gallium nitride (GaN) and silicon carbide (SiC) power technologies using 200mm wafers.

Simultaneously, Nexperia plans to expand the capacity of its 200mm silicon wafer fab for diodes and discrete power transistors at the Hamburg facility. The company is set to develop and produce all three technologies (SiC, GaN, and Si) in Germany starting in June 2024, specifically targeting data center power applications. The first production lines for high-voltage GaN D-Mode transistors and SiC diodes have already commenced operations in June 2024.

Back in 2021, Nexperia had already announced a significant investment in GaN reactors for its Hamburg site as part of a larger $700 million program. This recent injection of funds further solidifies Nexperia's commitment to advancing semiconductor technologies and expanding its production capabilities.

The next phase of development will see the establishment of modern and cost-efficient 200mm production lines for SiC MOSFETs and GaN HEMTs at the Hamburg factory over the next two years. Industry giants such as ST, Infineon Wolfspeed, Mitsubishi, and onsemi are all focusing on the production of both 200mm SiC wafers and power devices.

Nexperia's investment will not only facilitate the automation of existing infrastructure at the Hamburg site but also lead to an expansion of silicon production capacity through the systematic transition to 200mm wafers. The company is also enhancing its research and development capabilities by constructing new laboratories to ensure a seamless transition from research to production.

According to Achim Kempe, COO and managing director at Nexperia Germany, "This investment strengthens our position as a leading supplier of energy-efficient semiconductors and enables us to utilize available electrical energy more responsibly. Our Hamburg fab will soon cover the complete range of WBG semiconductors while remaining the largest factory for small signal diodes and transistors."

Nexperia's collaboration with universities and research institutes plays a crucial role in leveraging expertise and promoting highly qualified employee training. The company relies on a robust research and development ecosystem in Hamburg and partners with the Industrial Affiliation Program (IIAP) of the imec nanoelectronics research center in Belgium to drive innovation.

Looking ahead, Nexperia aims to reach new heights by expanding its semiconductor offerings. Stefan Tilger, CFO and managing director at Nexperia Germany, stated, "The planned investment enables us to bring WBG chip design and production to Hamburg. Nexperia is one of the few suppliers to offer a comprehensive range of semiconductor technologies, including Si, SiC, and GaN in both e-mode and d-mode, providing customers with a one-stop shop for all their semiconductor needs."

For more information on Nexperia's advancements in semiconductor technology, visit www.nexperia.com.