Mitsubishi Ships SiC Modules with SBD Integration

Mitsubishi Electric has recently announced the launch of new low-current 3.3kV/400A and 3.3kV/200A versions of its Schottky barrier diode (SBD) embedded silicon carbide (SiC) MOSFET module. This latest addition to their product lineup is known as the Unifull SBD MOSFET module and is specifically designed for use in large industrial equipment, such as rolling stock and electric power systems.

The Unifull series now consists of three modules, including the existing 3.3kV/800A version, all of which are targeted at inverters that can enhance power output and power conversion efficiency in various industrial applications. These modules feature an innovative package structure that helps to minimize switching loss and optimize the performance of SiC, resulting in improved overall efficiency.

Compared to traditional power modules, the Unifull modules offer a significant reduction in switching loss, which translates to higher power output and efficiency in industrial equipment. This makes them particularly well-suited for use in auxiliary power supplies for railcars and drive systems with lower capacity requirements.

The new Unifull SBD MOSFET modules from Mitsubishi Electric will be showcased at the upcoming PCIM 2024 exhibition in Nuremberg, Germany. This event provides an excellent opportunity for industry professionals and enthusiasts to learn more about the latest advancements in power electronics and industrial equipment.

By introducing these advanced modules, Mitsubishi Electric continues to demonstrate its commitment to innovation and excellence in the field of power electronics. The Unifull series represents a significant step forward in the development of high-performance components for industrial applications, offering improved efficiency and reliability for a wide range of equipment.