New MOSFET Technology Reduces Smartphone Power Loss

Magnachip, a leading semiconductor provider, has unveiled its latest technological innovation with the introduction of the Super-Short Channel FET II (SSCFET® II) technology in its new 12-V Dual N-channel MOSFET (MDWC12D024PERH). This cutting-edge technology marks a significant advancement in design, aimed at enhancing performance and efficiency in semiconductor products.

The SSCFET® II technology is designed to reduce the channel length, resulting in a remarkable 22% decrease in the RSS(on) compared to the previous generation product of similar specifications. This reduction translates to lower power loss, faster smartphone charging times, and a notable 12% decrease in internal smartphone temperature during fast charging mode.

As smartphone manufacturers worldwide continue to integrate advanced AI capabilities into their devices, the demand for high-performance MOSFET products is on the rise. The new 12-V MXT LV MOSFET from Magnachip offers superior power efficiency and is specifically optimized for a wide range of battery protection applications in premium smartphones, especially those equipped with on-device AI technology.

Market research conducted by Omdia forecasts a substantial growth in shipments of on-device AI smartphones, with an estimated average annual increase of 50% from 2024 to 2028. By 2028, the shipments are projected to reach a staggering 606 million units, underscoring the increasing significance of advanced semiconductor solutions in the smartphone industry.

YJ Kim, the CEO of Magnachip, expressed his enthusiasm for the company's latest technological breakthrough, stating, "Following the success of our Super-Short Channel FET I technology, we are thrilled to introduce the upgraded Super-Short Channel FET II technology. Our focus remains on developing innovative high-density cell trench technology and launching cutting-edge power products tailored for smartphones, smartwatches, and earphones in the latter half of this year."