Next-Gen SiC Powers AI Data Centers and EV Charging

Navitas Semiconductor has introduced a groundbreaking series of silicon carbide (SiC) switches designed specifically for data center and automotive applications. The Gen-3 ‘Fast’ (G3F) 650 V and 1200 V SiC MOSFETs developed by Navitas have been engineered to deliver higher switching speeds by enhancing thermal performance.

The G3F GeneSiC MOSFETs utilize a proprietary ‘trench-assisted planar’ technology, offering superior performance compared to traditional trench MOSFETs. These innovative switches not only provide enhanced efficiency but also boast superior robustness, manufacturability, and cost-effectiveness when compared to competitors in the market.

One of the key advantages of the ‘trench-assisted planar’ technology is the minimal increase in RDS(ON) with temperature variations. This feature results in significantly lower power losses across the entire operating range, with up to 20% lower RDS(ON) on-resistance under real-life high-temperature conditions compared to other SiC devices.

Furthermore, all GeneSiC MOSFETs from Navitas offer the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and precise threshold voltage distributions for easy paralleling. These features make the GeneSiC MOSFETs ideal for high-power applications that require fast time-to-market solutions.

The devices are available in industry-standard packages ranging from D2PAK-7 to TO-247-4, catering to demanding applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar/energy-storage systems (ESS).

A notable reference design is the 4.5 kW high-power density AI Server PSU in the CRPS185 form-factor, showcasing the 650V, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. This design, combined with GaNSafe Power ICs in the LLC stage, achieves a power density of 138 W/inch3 and peak efficiency above 97%, meeting the stringent ‘Titanium Plus’ efficiency standards mandated in Europe.

For the electric vehicle (EV) market, the 1200V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas to deliver a new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter with exceptional power density of 3.5 kW/L and a peak efficiency of 95.5%.

Dr. Sid Sundaresan, Senior Vice President of SiC Technology and Operations at Navitas, expressed his excitement about the new G3F series, stating, “G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems. We’re pushing the boundaries of SiC technology, achieving up to 600 kHz switching speeds and hard-switching figures-of-merit up to 40% better than our competitors.”

The SiC devices are currently available to qualified customers and will be showcased at the upcoming PCIM show in Germany. For more information, visit www.navitassemi.com.