Electronic Breaking News

US bets over $6bn to bring back DRAM

US bets over $6bn to bring back DRAM

The US government is to provide up to $6.15bn to Micron Technology to bring volume DRAM memory production back to the country.The funding is part of an ambitious $120bn plan to bring back advanced DRAM production in Idaho and New York, including...

Published on: December 10, 2024

DDS adopted into all AUTOSAR packages and platforms


DDS adopted into all AUTOSAR packages and platforms


Real-Time Innovations (RTI) has announced that the Data Distribution Service (DDS™) standard is now included in the AUTOSAR Foundation Package — a set of shared standards supporting both Classic and Adaptive Platforms.The AUTOSAR Classic Platform serves traditional automotive systems, while the Adaptive...

Published on: December 10, 2024

Rohm taps TSMC for volume GaN production

Rohm taps TSMC for volume GaN production

Japanese power chip developer Rohm has signed a strategic partnership on development and volume production of gallium nitride (GaN) devices for electric vehicle applications.The partnership will integrate ROHM’s device development technology with TSMC’s GaN-on-silicon process technology.The partnership builds on a history of...

Published on: December 10, 2024

ROHM and TSMC collaborate on GaN for automotive

ROHM and TSMC collaborate on GaN for automotive

ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications.The partnership will integrate ROHM’s device development technology with TSMC’s industry-leading GaN-on-silicon process technology to meet the growing demand for...

Published on: December 10, 2024

Quobly shows spin qubits on FD-SOI CMOS process

Quobly shows spin qubits on FD-SOI CMOS process

French quantum computing startup Quobly has shown spin qubits for quantum gates built on mainstream CMOS FD-SOI process technology.Quobly, previously Siquance, is a spin out of the CEA-Leti research labs in Grenoble developing spin qubits for quantum computing, integrating quantum and classical...

Published on: December 10, 2024

TSMC’s November sales up by 34 percent year-on-year

TSMC’s November sales up by 34 percent year-on-year

November sales at TSMC, the world’s leading foundry, were NT$276.06 billion (about US$8.48 billion, a sequential drop of 12. 2 percent but up year-on-year by 34.0 percent.Sequential drops in revenue are not so significant as sales can be lumpy within a quarter....

Published on: December 10, 2024

Compact tri-radio Wi-Fi 6 modules offer BLE and Thread

Compact tri-radio Wi-Fi 6 modules offer BLE and Thread

Murata Manufacturing Co., Ltd is expanding its innovative wireless communication module lineup by introducing the Type 2FR/2FP and Type 2KL/2LL Wi-Fi 6 modules.Designed to support the next generation of wireless connectivity across smart home, smart building, and industrial IoT applications, these compact...

Published on: December 10, 2024

Magnesium electrolyte sparks next generation battery design

Magnesium electrolyte sparks next generation battery design

University of Waterloo researchers have made a key breakthrough in developing next-generation batteries that are made using magnesium instead of lithiumWhen the idea to create batteries using magnesium was first shared in a seminal academic paper in 2000, that novel design didn’t...

Published on: December 10, 2024

Infineon adds SAE 21434 security to Traveo MCUs

Infineon adds SAE 21434 security to Traveo MCUs

Infineon Technologies is retrofitting SAE 21434 cybersecurity to its Traveo T2G body and cluster microcontrollers.The increasing connectivity of road vehicles leads to a growing need for cybersecurity. OEMs need a valid type approval certificate and implement cybersecurity practices throughout the supply chain...

Published on: December 10, 2024

Kioxia announces low-power, high density OCTRAM technology

Kioxia announces low-power, high density OCTRAM technology

Kioxia Corporation has announced the development of OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), a new type of 4F2 DRAM, comprised of an oxide-semiconductor transistor that has a high ON current, and an ultra-low OFF current, simultaneously.This memory technology is expected to realise a...

Published on: December 10, 2024