Polar licenses Renesas GaN-on-Si technology for US production

Polar Semiconductor has recently announced a strategic agreement with Renesas Electronics Corporation to license their Gallium Nitride on Silicon D-Mode (GaN-on-Si) technology. This partnership will see Polar manufacturing high voltage 650-V Class GaN-on-Si devices for Renesas and other clients at its advanced 200mm automotive-grade manufacturing facility in Minnesota. Equipped with cutting-edge processing and automation equipment, the facility is well-prepared to cater to the growing demand for next-generation semiconductors.

The adoption of GaN technology in the market is expected to receive a significant boost due to the cost efficiency and innovative device architectures achievable through the scaling to 200mm fabrication. By combining Polar’s manufacturing capabilities with Renesas’ established power semiconductor technology and market leadership, this collaboration aims to provide customers with a secure supply of competitively priced, high-quality, and high-performance GaN device wafers.

Together, Polar and Renesas will work towards expanding the commercial production of GaN devices, with a focus on various critical industries such as automotive, data centers, consumer electronics, industrial applications, and aerospace and defense markets. This agreement not only ensures a reliable domestic source of cutting-edge semiconductor technology in the U.S. but also paves the way for broader industry adoption.

Commenting on the agreement, Surya Iyer, President and COO of Polar Semiconductor, emphasized the commitment to bolstering the domestic semiconductor ecosystem. He highlighted the transformative potential of GaN technology in power and RF applications, expressing confidence in the partnership with Renesas to accelerate commercial production, secure key defense programs, and drive semiconductor innovation to new heights.

Chris Allexandre, SVP and GM of the Power Products Group at Renesas, echoed similar sentiments, stating that the collaboration with Polar will enable the scaling of their proven GaN technology to 200mm wafers. This strategic alliance aims to leverage expertise across diverse power conversion markets, including infrastructure, AI, energy, industrial applications, e-mobility, xEVs, and high-value IoT. By establishing a robust U.S.-based manufacturing capability for GaN products, the partnership seeks to offer customers multi-sourcing options and address the rising demand for high-performance power solutions.