Renesas Delays SiC Production

Renesas Electronics has clarified that it has suspended the development of silicon carbide (SiC) power devices in Japan, but it is not exiting the market as previously reported. The company has disbanded its SiC production team at its 150mm Takasaki fab in Gunma Prefecture, while continuing the design of devices that could potentially be manufactured at partner foundries.

Addressing the situation, a Renesas spokesperson stated, “We have temporarily suspended SiC development, but this is not a decision to abandon or withdraw from the market. Although we do not have a specific production plan at present, we will continue to monitor market conditions and operate our business accordingly.”

• Cash crisis at Wolfspeed
• Toshiba takes on Global Power Technologies in SiC patents
• X-fab boosts SiC foundry process

Notably, Primit Parikh, co-founder and CEO of gallium nitride firm Transphorm, has assumed the role of vice president of the power business, which has been separated out within Renesas.

The decision to suspend in-house silicon carbide production is influenced by various factors. The electric vehicle (EV) market has experienced a slowdown in the past two years, resulting in an oversupply of SiC devices from Chinese manufacturers and a decline in prices. Additionally, Renesas has a $2 billion deal with Wolfspeed, which is currently under court protection due to financial challenges arising from similar market conditions, along with competition from Infineon and STMicroelectronics, who have introduced competing 200mm production capabilities.

• Infineon ships first devices from 200mm wafers
• Europe approves €2bn support for 200mm line

Market research conducted by TrendForce indicates that Chinese vendors TanKeBlue and SICC have rapidly gained significant market share, capturing 17.3% and 17.1% of the global market, respectively.