CGD unveils 800V EV power design

Cambridge GaN Devices (CGD) has collaborated with IFP Energies nouvelles (IFPEN) in France to develop a cutting-edge three-level power inverter for electric vehicles utilizing its integrated gallium nitride power device. This innovative project will be showcased at the upcoming PCIM power exhibition and conference in Nuremberg, Germany, next month, highlighting the advancements in electric vehicle technology.

The unique combo device integrates ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) within the same module or IPM, offering a cost-effective alternative to the more expensive silicon carbide (SiC) devices commonly used in the industry. This integration paves the way for enhanced performance and efficiency in electric vehicle power systems.

The ANPC EV inverter designed for 800 V traction is capable of delivering 100 kW using the ICeGaN combination devices in parallel configuration. The three-level Active Neutral Point Clamped (ANPC) inverter topology not only improves inverter efficiency but also reduces Total Harmonic Distortion (THD) and minimizes dV/dt at the motor, resulting in smoother operation.

Compared to traditional neutral-point clamped (NPC) configurations, the ANPC topology offers greater flexibility in managing power losses and enhancing output voltage waveform quality. The reduced switching losses enable a remarkable power density of 25 to 30 kW per liter, setting a new standard in electric vehicle power electronics.

The dual-side cooled DHDFN package with a dual-gate pinout simplifies PCB routing, while ICeGaN’s integrated control circuitry supports current sharing, ensuring efficient operation. The clean switching characteristics allow for full current (400 V, 120 A) in double-pulse tests, demonstrating the robustness and reliability of the system.

Furthermore, the 650 V 25 mΩ full bridge 4-10 kW reference design incorporates double-side cooling to reduce thermal resistance, enabling the highest power density possible. This breakthrough in GaN EV technology signifies a significant step forward in the quest for more efficient and sustainable electric vehicles.

Giorgia Longobardi, the founder and CEO of CGD, expressed enthusiasm about the potential impact of their latest P2 series ICs, which feature RDS(on) levels as low as 25 mΩ, supporting multi-kilowatt power levels with exceptional efficiency. Longobardi emphasized the importance of maintaining high efficiency in EV powertrains to enable faster charging and longer driving ranges.

Longobardi highlighted the versatility of the Combo ICeGaN solution, which intelligently combines the strengths of GaN and silicon technologies to deliver optimal performance at a competitive cost. By extending their technology roadmap to address EV applications exceeding 100 kW, CGD aims to revolutionize the electric vehicle industry and collaborate with key players to bring this innovative technology to the market.

With a secure supply chain in place, including manufacturing partnerships with TSMC and ASE, as well as distribution through Digi-Key, CGD is well-positioned to drive the adoption of Combo ICeGaN technology in the automotive sector. The future looks promising for the integration of gallium nitride power devices in electric vehicles, ushering in a new era of efficiency and sustainability in transportation.