Intel Fellow Updates on High-NA EUV Lithography Advancements

ASML Holding NV, based in Veldhoven, The Netherlands, is currently in the process of integrating and calibrating the Twinscan EXE: 5000 scanner at Intel's R&D site D1X in Hillsboro, Oregon. Mark Phillips, Intel Fellow and director of lithography, hardware, and solutions for Intel Foundry logic technology development, mentioned that Intel will commence development work on the machine later in 2024.

Intel's plans involve utilizing both 0.33NA EUV and 0.55NA EUV in conjunction with other lithography processes to develop and manufacture advanced chips. The initial product proof points are expected to be seen on Intel 18A in 2025, followed by the transition to Intel's 14A process in 2026, as per information shared by Intel.

During a conference call with journalists discussing high-NA EUV, Phillips highlighted the capabilities of high-NA EUV technology. It is anticipated that high NA EUV will be capable of printing features up to 1.7 times smaller than existing EUV tools, enabling 2D feature scaling and up to 2.9 times more density. The higher imaging contrast provided by High NA EUV allows for less light per exposure, reducing the time needed to print each layer and increasing wafer output.

Phillips expressed his belief that high-NA technology will cater to leading-edge chip manufacturing down to 1 angstrom and below, essentially reaching the dimensions of a single atom. He also mentioned his expectation of at least three generations of high NA technology, emphasizing that a reduction in EUV wavelength from the current 13.5nm is not foreseen as a viable lithography advancement in the near future.

Despite the advancements in high-NA EUV lithography, challenges persist. The implementation of high-NA optics results in a reduction in the maximum field size of the reticle due to the use of an anamorphic lens array. This reduction leads to a halving of the standard reticle limit from 26mm by 33mm for conventional EUVL to 26mm by 13.5mm, driven by the enhanced resolution capabilities of high-NA EUV lithography.