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Tabletop precision Lasers for Quantum Science

Tabletop precision Lasers for Quantum Science

“These smaller lasers will enable scalable laser solutions for actual quantum systems, as well as lasers for portable, field-deployable and space-based quantum sensors”For experiments that require ultra-precise measurements and control over atoms — think two-photon atomic clocks, cold-atom interferometer sensors and quantum...

Published on: December 30, 2024

Singapore quantum spinout looks to AI integration

Singapore quantum spinout looks to AI integration

A spinout in Singapore is looking to raise funds for AI integration of its quantum controller technology.AQSolotl uses technology developed at Nanyang Technological University, Singapore (NTU Singapore) and National University of Singapore (NUS) for a real time controller that acts as a translator between conventional...

Published on: December 30, 2024

MIT spinout to build true 3D chips with 2D materials

MIT spinout to build true 3D chips with 2D materials

Researchers at MIT in the US have developed a technique for building true monolithic 3D chips using 2D materials.The research, backed by Samsung and the US Air Force, is being spun out into a new company called Future Semiconductor 2D materials (FS2)...

Published on: December 30, 2024

South Korea accelerates world’s largest semiconductor complex

South Korea accelerates world’s largest semiconductor complex

Despite recent political turmoil, the authorities in South Korea have accelerated approvals for the world’s largest semiconductor industrial complex.The approvals for the Yongin Semiconductor National Industrial Complex come three months ahead of the initial target, with building plans also accelerated by three...

Published on: December 29, 2024

ST backs Innoscience IPO as shares start trading

ST backs Innoscience IPO as shares start trading

Shares in Chinese GaN chip supplier Innoscience are set to trading this week following the backing of STMicroelectronics.The shares will be listed on Hong Kong Stock Exchange on December 30th, and the IPO was underwritten by ST Hong Hong at US$50m, the...

Published on: December 29, 2024

Processing-in-memory startup gains microphone design win

Processing-in-memory startup gains microphone design win

Startup company PIMIC Inc. (Cupertino, Calif.) has gained a design win for its neural networking noise cancellation chip inside a digital microphone from ZillTek Technology Corp. (Hsinchu, Taiwan).The Clarity NC100 is designed for use in single-microphone applications in edge and wearable devices...

Published on: December 28, 2024

Nvidia tapes-out B300 Blackwell, says report

Nvidia tapes-out B300 Blackwell, says report

Nvidia Corp. has taped-out an upgraded Blackwell GPU, the B300, and tipped an improved Grace-Blackwell component, the GB300, according to SemiAnalysis.The B300 design targets the same 4NP 4nm-nominal manufacturing process from foundry TSMC that is used for B100 and B200. However, tweaks...

Published on: December 28, 2024

Solid state cooling boost for ARM AI laptop PC

Solid state cooling boost for ARM AI laptop PC

Frore Systems has demonstrated its MEMS-based solid state cooling system in a proof of concept using the latest ARM-based Samsung Galaxy Book4 Edge notebook AI PC.The 14in notebook is the thinnest on the market at just 10.9 mm and integrates two AirJet...

Published on: December 27, 2024

QuickLogic sees $6.5m more for rad hard FPGA

QuickLogic sees $6.5m more for rad hard FPGA

QuickLogic has received $6.5m in its fourth tranche of funding from the US Department of Defense (DoD) for its radiation hard FPGA programme.The funding will support the continued development and demonstration of Strategic Radiation Hardened (SRH) high reliability Field Programmable Gate Array...

Published on: December 27, 2024

1200V GaN uses hafnium gate

1200V GaN uses hafnium gate

Sandia National Laboratories in the US has demonstrated a high power 1200V MOSFET using gallium nitride (GaN) using a hafnium gate with a high-K electric. The 1200V MOSFET uses a 100nm hafnium dioxide (HfO2) gate dielectric to achieve a current density of  330...

Published on: December 27, 2024

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