Magnachip Achieves Volume Production of 30V MXT LV Megal MOSFET

The 30V MXT LV MOSFET plays a crucial role in providing a stable power supply to EPS, which in turn assists a vehicle's directional control through an electric motor. One of the key advantages of this device is its adherence to the rigorous AEC-Q101 standards, ensuring high-quality performance and reliability. Furthermore, it guarantees a wide operating junction temperature range between -55°C to 175°C, making it suitable for various automotive applications.

One of the standout features of the 30V MXT LV MOSFET is its rugged trench MOSFET structure in a thick gate oxide. This design choice results in low resistance and excellent switching characteristics, ultimately reducing switching noise in applications and enhancing system performance with high power efficiency. Additionally, the compact size of the device, made possible by the application of a PDFN 33 package measuring 3.3mm x 3.3mm, allows for flexible design options for ECUs.

Magnachip's MXT LV MOSFET product portfolio includes a range of trench MOSFETs with voltage ratings between 12V and 40V. The new 30V MXT LV MOSFET is a valuable addition to this lineup, specifically catering to the automotive industry's needs.

With its impressive specifications and adherence to industry standards, the 30V MXT LV MOSFET is an ideal choice for various applications, including electronic control units of electric power steering systems, road switches, and switching power supply units. Its maximum resistance during on-state operation, denoted as *RDS(on)_max, is 15.0mΩ, further highlighting its efficiency and performance capabilities.