Imec Prepares High-NA EUV Scanner for Initial Wafer Testing

Imec, a leading research and innovation hub in nanoelectronics and digital technologies, has made significant strides in the development of High-NA EUV technology. Recently, Imec demonstrated the readiness of High-NA EUV for transferring EUV processes into the joint imec-ASML High-NA EUV Lab. This lab is built around the first prototype High-NA EUV scanner, marking a major milestone in the advancement of EUV lithography.

"The first High-NA EUV scanner has been assembled by ASML, and the first wafers will be exposed soon," said Steven Scheer, senior vice president of Advanced Patterning, Process and Materials at imec. "In the next few months, the joint imec-ASML High-NA EUV Lab will be operational, providing access to High-NA customers."

The High-NA EUV lab, equipped with state-of-the-art tools and processes, offers customers an early opportunity to familiarize themselves with High-NA EUV technology before its implementation in their own facilities. Imec, in collaboration with ASML and its network of suppliers, has played a crucial role in ensuring the timely availability of advanced materials, imaging strategies, and patterning techniques.

Field stitching plays a vital role in High-NA EUV technology due to the unique characteristics of the anamorphic lens. This lens results in field sizes that are half of those in conventional scanners, necessitating field stitching for seamless integration. Imec will share insights on at-resolution stitching, a technique developed in partnership with ASML and mask shop partners, to address the challenges posed by the field size reduction.

On the material and process front, metal-oxide resists (MORs) have emerged as the preferred choice for metal line/space patterns. Imec has made significant advancements in MOR technology, particularly in reducing EUV dose-to-yield ratios. Through careful selection of underlayers, optimization of development processes, and mask considerations, Imec has achieved over 20% dose reduction for lines and spaces without compromising quality.